氮化镓，英文名叫“GaN”，是一种新型半导体材料，它具有禁带宽度大、热导率高、耐高温、抗辐射、耐酸碱、高强度和高硬度等特性，在早期广泛运用于新能源汽车、轨道交通、智能电网、半导体照明、新一代移动通信，被誉为第三代半导体材料。随着技术突破成本得到控制，目前氮化镓还被广泛运用到消费类电子等领域，充电器便是其中一项。
采用了GaN氮化镓元件的充电器最直观的感受就是体积小、重量轻，在发热量、效率转换上相比普通充电器也有更大的优势，大大的提升了我们的使用体验，特别适用于经常出差的人士。
2020年以来，各种品牌、款式和功率的氮化镓快充纷纷推出，让人应接不暇，其中又以65W功率段最为突出。无论是手机品牌，PC品牌还是电商品牌，都将其作为自家的主打产品系列，市场竞争十分激烈，已趋于白热化。
南芯半导体不断探索研发高端芯片，是国产模拟芯片替代浪潮中的开拓者，凭借其扎实的技术和经验积累，建立了技术领先、品质优异、产品性价比高的“高端中国芯”的领军品牌形象。随着手机USB PD充电和私有协议大功率充电的普及，南芯半导体针对USB PD等大功率快充适配器市场，推出全套解决方案，助力客户打造高功率密度、高安全、高可靠性的快充产品。
日前，南芯结合纳微的氮化镓推出65W 1A1C方案，满载效率可以达91%, 尺寸可达60mm*30mm*27mm，功率密度比在行业中处于前列位置，采用南芯SR方案SC3503,降压方案SC8101,协议方案SC2011。
- 满载效率: 91%
- 尺寸：60mm*30mm*27mm
- 高压绝缘：1500Vdc
- 工作频率：150kHz-260kHz
- 变 压 器 工 作 温 度 ： - 4 0 ℃ + 1 2 5 ℃
SC3505
- Wide output range, even down to 0V.
- No need of auxiliary winding for power supply.
- Patented programmable turn on detection circuitry
- prevents MOSFET from mistake turn-on.
- Compliant with multiple types of MOSFETs
- High efficiency can meet CoC V5 and DoE VI.
- 10nS turn off propagation delay
- High switching frequency up to 1MHz.
- Extremely low quiescent current leads to low stand by power.
- Supports DCM, CCM, and Quasi-Resonant mode converters.
- Supports both high and low side synchronous rectification.
SC8101
- Wide input operating voltage from 5V to 32V
- Max output capacity 5V/5A with internal MOSFETs
- External low side NMOS gate driver
- Almost 100% duty cycle operation
- Ultra-low quiescent current
- ±2% output voltage reference accuracy
- ±4.5% output current limit accuracy
- Programmable output power limit
- Programmable line drop compensation
- PFM mode
- Fixed-150K switching frequency or adjustable by external resistor
- Hiccup and auto-restart
- Full protection of UVLO, IN/OUT-OVP, OCP, OTP
SC2011
- USB Type-C
- ➢ Support Type-C DRP protocols
- ➢ Configurable resistors RP and RD
- ➢ Support Rd when battery is dead
- USB Power Delivery
- ➢ Support DFP USB PD 3.0
- ➢ Hardware BMC transmitter and receiver
- ➢ Full feature physical layer
- ➢ Hardware CRC
- ➢ Hardware reset
- ➢ Integrate PD 3.0 protocol engine
- ➢ Support SOP’ to be compatible with e-marker
- Up to 2x DPDM Fast Charging Interface
- ➢ Up to 2x firmware controlled DPDM interface
- ➢ Support Apple charging, BC1.2, DCP, HVDCP, FC, AFC, FCP, SCP, VOOC, UART and other proprietary charging protocols Ÿ
- Power
- ➢ Wide operation range: 2.7V to 24.5V (30V tolerant)
- MCU Subsystem
- ➢ Integrated CPU
- ➢ 32-KB OTP and 1-KB RAM
- ➢ Support I2C interface and multiple I/Os
- Analog Block
- ➢ PWM for voltage regulation
- ➢ Up to 8-channel 10-bit ADC to monitor the voltage
- / current / external signals
- ➢ Integrated current sense amplifier
- ➢ Integrated NMOS gate driver for isolation MOS
- ➢ Integrated VBUS discharging paths at both sides of
- isolation MOS
- ➢ Build-in NPN transistor driver for VCC regulation
- Protections
- ➢ On chip OVP, DPDM OVP, CC OVP
- ➢ VBUS to CC / DPDM short protection
- ➢ GND to CC / DPDM short protection
- Package
- ➢ 20-pin QFN，
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